JPH0447463B2 - - Google Patents

Info

Publication number
JPH0447463B2
JPH0447463B2 JP59147535A JP14753584A JPH0447463B2 JP H0447463 B2 JPH0447463 B2 JP H0447463B2 JP 59147535 A JP59147535 A JP 59147535A JP 14753584 A JP14753584 A JP 14753584A JP H0447463 B2 JPH0447463 B2 JP H0447463B2
Authority
JP
Japan
Prior art keywords
buried layer
layer
type
conductivity type
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59147535A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6127669A (ja
Inventor
Katsuyoshi Washio
Makoto Hayashi
Tomoyuki Watabe
Takahiro Okabe
Katsuhiro Norisue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd filed Critical Hitachi Microcomputer System Ltd
Priority to JP14753584A priority Critical patent/JPS6127669A/ja
Priority to KR1019850004972A priority patent/KR920010434B1/ko
Priority to US06/755,912 priority patent/US4694321A/en
Publication of JPS6127669A publication Critical patent/JPS6127669A/ja
Publication of JPH0447463B2 publication Critical patent/JPH0447463B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
JP14753584A 1984-07-18 1984-07-18 半導体装置 Granted JPS6127669A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP14753584A JPS6127669A (ja) 1984-07-18 1984-07-18 半導体装置
KR1019850004972A KR920010434B1 (ko) 1984-07-18 1985-07-12 바이폴라 트랜지스터와 iil을 갖는 반도체 장치
US06/755,912 US4694321A (en) 1984-07-18 1985-07-17 Semiconductor device having bipolar transistor and integrated injection logic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14753584A JPS6127669A (ja) 1984-07-18 1984-07-18 半導体装置

Publications (2)

Publication Number Publication Date
JPS6127669A JPS6127669A (ja) 1986-02-07
JPH0447463B2 true JPH0447463B2 (en]) 1992-08-04

Family

ID=15432507

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14753584A Granted JPS6127669A (ja) 1984-07-18 1984-07-18 半導体装置

Country Status (3)

Country Link
US (1) US4694321A (en])
JP (1) JPS6127669A (en])
KR (1) KR920010434B1 (en])

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219636A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体装置
US5177584A (en) * 1988-04-11 1993-01-05 Hitachi, Ltd. Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same
US5244821A (en) * 1991-06-07 1993-09-14 At&T Bell Laboratories Bipolar fabrication method
JPH08213475A (ja) * 1995-02-07 1996-08-20 Mitsubishi Electric Corp 半導体装置とその製造方法
US7064416B2 (en) * 2001-11-16 2006-06-20 International Business Machines Corporation Semiconductor device and method having multiple subcollectors formed on a common wafer

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157268A (en) * 1977-06-16 1979-06-05 International Business Machines Corporation Localized oxidation enhancement for an integrated injection logic circuit
JPS5819177B2 (ja) * 1978-07-14 1983-04-16 日本電信電話株式会社 フレ−ム同期回路
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
JPS6043024B2 (ja) * 1978-12-30 1985-09-26 富士通株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
US4694321A (en) 1987-09-15
JPS6127669A (ja) 1986-02-07
KR920010434B1 (ko) 1992-11-27
KR860001488A (ko) 1986-02-26

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